![]() A maximum drain current density of 0.8 and ~1 A/mm is obtained using a constant low-field and field-dependent mobility model, respectively, in the device with a gate length ( L G) of 0.1 µm and channel width of 100 nm. The constant low-field mobility model accounting for lattice temperature and field-dependent mobility model accounting for negative differential carrier mobility are evoked to analyze the electric field and carrier concentration by varying the channel width ( W C). The recessed parts of the gate laterally control the two-dimensional-electron-gas (2DEG) density in the channel as opposed to vertical control in the conventional planar HEMT. In this work, we present the effect of buried gate dimensions on electron mobility in a laterally gated AlN/β-Ga 2O 3 high-electron-mobility-transistor (HEMT) using 3D numerical simulations.
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